Intevac ENERGi Productivity
Reduced Process Steps Increase Efficiency and Lower Costs
In today’s high volume p-type front contact cell lines, ion implant can raise the efficiency in the line above 19.5% average and exhibit a comprehensive CoO of < 0.8 U.S. cents/watt.
As cell process technology is driven toward 20% cell efficiency and higher with more complex flows such as PERC, n-type, bifacial or IBC, the opportunity for ion implant to reduce process steps and costs is even greater.
With the ENERGi ion implant system the emitter is formed at a faster rate with superior uniformity and better repeatability than diffusion furnaces can attain. The flow is also simplified due to single sided doping and the elimination of the acid glass etch.
As Cell Types Grow More Complex, ENERGi Reduces Steps and Cost
INTEVAC ENERGi BENEFITS
- High throughput at 3000 wafers per hour (P and N-type)
- Fast and robust beam tuning for wide dose range
- Identical productivity for Boron and Phosphorus doping
- Simplified P and N-type process flow